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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS3102 RF & MICROWAVE TRANSISTORS SATCOM APPLICATIONS Features * * * BALLASTED DIE GEOMETRY CLASS C OPERATION COMMON BASE CONFIGURATION DESCRIPTION: THE MS3102 IS A 28V CLASS C SILICON NPN TRANSISTOR DESIGNED FOR INMARSAST AND OTHER 1.65 GHz SATCOM APPLICATIONS. A GOLD METALLIZED EMITTER BALLASTED DIE GEOMETRY IS EMPLOYED PROVIDING HIGH GAIN AND EFFICIENCY. MS3102 IS PACKAGED IN A N EPOXY SEALED HOUSING. ABSOLUTE MAXIMUM RATINGS Symbol VCBO VEBO IC TJ T STG Parameter Collector-base Voltage Emitter-base Voltage Device Current Junction Temperature Storage Temperature Value 45 3.5 2.3 +200 -65 to +150 Unit V V A C C Thermal Data RTH(J-C) Thermal Resistance Junction-case 6.0 C/W MSC0931.PDF 10-13-98 MS3102 ELECTRICAL SPECIFICATIONS (Tcase = 25C) (Tcase 25 STATIC Symbol Bvcbo Bvceo Bvebo HFE IC = 3 mA IC = 3 mA IE = 3 mA VCE=5V Test Conditions Min. IE = 0 mA IB= 0 mA IC = 0 mA IC = 600 mA 45 12 3.5 15 Value Typ. --------- Max. ------150 Unit V V V --- DYNAMIC Symbol Pout c f=1.65 GHz f=1.65 GHz f=1.65 GHz Test Conditions Min. PIN= 0.8 W PIN= 0.8 W PIN= 0.8 W VCE=28V VCE=28V VCE=28V 10 11 48 Value Typ. ------- Max. ------- Unit W dB % Gpe MSC0931.PDF 10-13-98 MS3102 PACKAGE MECHANICAL DATA MSC0931.PDF 10-13-98 |
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